EPC2202

$3.27

Description：GANFET N-CH 80V 18A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a46f6c8e014e Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：GANFET N-CH 80V 18A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：17mOhm @ 11A, 5V
Vgs(th) (Max) @ Id：2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs：4 nC @ 5 V
Vgs (Max)：+5.75V, -4V
Input Capacitance (Ciss) (Max) @ Vds：415 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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EPC2202

Overview

The EPC2202 is an 80 V, 16 mΩ eGaN FET with a pulsed current rating of 75 A in a 2.1 mm x 1.6 mm chip-scale package. It is AEC-Q101 qualified for automotive applications.

Feature Summary

AEC-Q101 qualification for automotive electronics
High-frequency capability with lower switching losses
Zero reverse recovery losses
Extremely small chip-scale packaging

Applications

LiDAR
High-intensity headlights
48 V to 12 V DC-DC converters
Ultra-high fidelity infotainment systems

Procurement Notes

Verify the specific datasheet version and AEC-Q101 certification status directly from Efficient Power Conversion (EPC) official documentation before procurement. Ensure the component meets the required automotive reliability standards for the intended application environment.

Selection Notes

Select the EPC2202 when high efficiency, fast switching speeds, and minimal footprint are critical. Its low on-resistance and zero reverse recovery make it suitable for high-power density designs requiring robust performance under demanding electrical conditions.

Part Context

This component belongs to the eGaN family of GaN Chip-Scale AEC-Q101 Qualified FETs. These devices enable automotive electronics to leverage improved efficiency, speed, smaller size, and lower cost compared to traditional silicon-based solutions.