EPC2207

$2.72

Description：TRANS GAN 200V DIE .022OHM
Series：-
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:32f71011c0ac Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：TRANS GAN 200V DIE .022OHM
Series：-
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：14A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：22mOhm @ 14A, 5V
Vgs(th) (Max) @ Id：2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs：5.9 nC @ 5 V
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：600 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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EPC2207

Overview

The EPC2207 is an enhancement-mode Gallium Nitride (GaN) power transistor manufactured by Efficient Power Conversion Corporation. It features a 200 V drain-to-source voltage rating and a maximum continuous drain current of 14 A at ambient temperature, with a pulsed current capability of 54 A. The device exhibits a typical on-resistance of 22 mΩ at a gate drive of 5 V. Packaged as a surface-mount die in a molded configuration, it operates within a junction temperature range of -40°C to 150°C.

Feature Summary

Utilizes eGaN FET technology for high-efficiency power switching
Enhancement mode operation with low gate charge characteristics
Compact footprint suitable for high-density power designs

Applications

DC/DC converters
Brushless DC (BLDC) motor drives
Synchronous rectification for AC/DC and DC/DC applications
Wireless power transfer systems

Procurement Notes

Verify the specific ordering suffix to confirm packaging format, such as tape and reel or cut tape options. Confirm that the procurement channel provides official datasheets and ensures the component matches the manufacturer's active status. Cross-reference part numbers with authorized distributors to avoid counterfeit components and ensure supply chain integrity.

Selection Notes

Select this component for applications requiring high switching frequencies and reduced magnetic component size. Ensure the gate driver circuit supports the recommended 5 V drive level to achieve optimal on-resistance. Verify thermal management strategies are adequate for the target operating environment given the surface-mount die package constraints.

Part Context

This component belongs to the EPC eGaN FET family, designed to replace traditional silicon MOSFETs in power conversion circuits. It is often evaluated using development boards like the EPC90124, which provides a half-bridge configuration with onboard gate drivers for testing purposes.