EPC2216

$1.70

Description：GANFET N-CH 15V 3.4A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:93aa623b21b6 Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：GANFET N-CH 15V 3.4A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：15 V
Current - Continuous Drain (Id) @ 25°C：3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：26mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：1.1 nC @ 5 V
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：118 pF @ 7.5 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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EPC2216

Overview

The EPC2216 is an automotive-grade, enhancement-mode Gallium Nitride (GaN) power transistor manufactured by Efficient Power Conversion. It features a lateral device structure with N-channel polarity and a BGA-6 package. Key electrical parameters include a drain-source breakdown voltage of 15 V, a continuous drain current of 3.4 A, and a maximum gate-source voltage range of -4 V to +6 V. The device exhibits a typical on-resistance of 26 mΩ at 5 V gate drive, a gate charge of 0.87 nC, and a threshold voltage of 2.5 V. It operates within a temperature range of -55°C to +150°C junction temperature.

Feature Summary

Utilizes lateral GaN technology for ultra-low on-resistance and zero reverse recovery charge.
Designed for high-efficiency switching with exceptionally low gate charge.
Automotive-grade qualification for robust performance in demanding environments.

Applications

High-speed DC-DC conversions
LIDAR and pulsed power applications
LIDAR systems for augmented reality

Procurement Notes

Verify the specific ordering suffix and package variant when sourcing, as manufacturers may offer different tape-and-reel or cut-tape options. Confirm RoHS compliance status and ensure the component meets automotive reliability standards required for your specific application environment before finalizing procurement.

Selection Notes

Select this component for designs requiring minimal switching losses and high frequency operation. The low gate charge reduces driver complexity, while the 15 V rating suits low-voltage bus architectures. Ensure the PCB layout accommodates the small BGA footprint and thermal requirements for optimal heat dissipation during continuous operation.

Part Context

This part belongs to EPC's eGaN FET family, which leverages lateral semiconductor structures to achieve superior electron mobility compared to traditional silicon MOSFETs. The EPC2216 specifically targets automotive and high-density power conversion markets where size, weight, and efficiency are critical constraints.

Replacement Considerations

No publicly confirmed substitute part numbers are available in the provided documentation. Evaluate alternative devices based on matching voltage ratings, current capabilities, and package dimensions if substitution is necessary.