EPC2218A

Overview

The EPC2218A is an enhancement-mode Gallium Nitride Field-Effect Transistor (eGaN FET) manufactured by Efficient Power Conversion. It features a single N-channel configuration housed in an LGA-8 package with dimensions of 3.5 mm x 1.95 mm. The device supports a drain-source breakdown voltage (Vds) of 80 V and delivers a continuous drain current (Id) of 60 A. Its on-resistance (Rds(on)) is specified at 3.2 milliohms when measured at a gate-source voltage of 5 V. The gate threshold voltage (Vgs(th)) is 2.5 V, with an absolute maximum gate-source voltage range of -4 V to 6 V. Total gate charge (Qg) is 10.5 nC. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

• Zero reverse recovery charge eliminates switching losses associated with body diode conduction.
• Low gate charge enables faster switching speeds and reduced driver power requirements.
• Enhanced mode operation provides normally-off safety characteristics.

Applications

• Laser Diode Drivers for LiDAR Systems
• Synchronous Rectification in DC/DC Converters
• Class D Audio Amplifiers

Procurement Notes

Verify the specific suffix 'A' against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure the ordering documentation explicitly references the LGA-8 package format. Confirm that the revision level matches the design requirements for thermal management and switching performance specifications.

Selection Notes

Select this component for applications requiring high power density and low conduction losses in compact form factors. The 80 V rating suits 48 V systems, while the low Rds(on) minimizes heat generation. Evaluate the gate drive requirements against the 2.5 V threshold and 10.5 nC charge to optimize switching frequency and efficiency.

Part Context

This device belongs to the eGaN FET family from Efficient Power Conversion, designed to replace traditional silicon MOSFETs. It utilizes gallium nitride technology to achieve superior performance metrics compared to conventional semiconductor materials. The product line targets modern power electronics demanding higher efficiency and smaller physical footprints.

Replacement Considerations

Cross-reference with EPC2218 if the 'A' suffix denotes a specific manufacturing lot or minor revision variant. Verify functional equivalence with other 80 V eGaN devices only after confirming identical pinouts and electrical parameters via official substitution guides.

FAQ

What is the maximum operating junction temperature?

The maximum operating temperature is +150°C.

Does this device exhibit reverse recovery charge?

No, the eGaN FET technology eliminates reverse recovery charge (QRR).