EPC2219

$1.70

Description：TRANS GAN 65V AECQ101 3.3OHM DIE
Series：-
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:88b9bcb4e2bb Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：TRANS GAN 65V AECQ101 3.3OHM DIE
Series：-
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：65 V
Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：3.3Ohm @ 59mA, 5V
Vgs(th) (Max) @ Id：2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：0.064 nC @ 5 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：10 pF @ 32.5 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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EPC2219

Overview

The EPC2219 is a 65 V, 0.5 A enhancement-mode GaN power transistor featuring an integrated reverse gate clamp diode. It utilizes eGaN FET technology to achieve low on-resistance and minimal gate charge. The device operates within a junction temperature range of -40°C to 150°C and is supplied as a surface-mount die.

Feature Summary

Enhancement-mode operation with integrated reverse gate clamp diode
eGaN FET technology for high-speed switching performance
Automotive qualification compliant (AEC-Q101)

Applications

High-speed gate driving
Wireless power transfer
Class D audio amplifiers

Procurement Notes

Verify the specific revision level and packaging configuration when sourcing this component. Confirm that the supplier provides traceability documentation required for automotive applications. Ensure the die handling procedures align with the manufacturer's specifications for surface-mount assembly.

Selection Notes

Select this component for designs requiring compact form factors and high-frequency operation. The low gate charge supports efficient driver design. Verify thermal management capabilities against the specified junction temperature limits during peak load conditions.

Part Context

This part belongs to the eGaN FET family from Efficient Power Conversion Corporation. It represents a discrete semiconductor solution designed for power conversion and signal processing applications where size and efficiency are critical constraints.