EPC2221

FET, MOSFET Arrays Overview

The EPC2221 is an automotive-grade, enhancement-mode dual eGaN® FET with a common source configuration. It features a maximum drain-to-source voltage (VDS) of 100 V and a continuous drain current (ID) of 5 A at 25°C. The device has a maximum on-resistance (RDS(on)) of 58 mΩ at VGS = 5 V and ID = 4 A. Total gate charge (QG) is typically 0.85 nC at VDS = 50 V, VGS = 5 V, and ID = 4 A. Input capacitance (CISS) is typically 150 pF at VDS = 50 V. The junction temperature range is -55°C to 150°C. Thermal resistance from junction to case (top) is typically 2.2 °C/W.

FET, MOSFET Arrays Feature Summary

• Dual eGaN FET structure with a common source terminal for simplified multi-channel integration
• Ultra-fast switching capability supporting high-frequency operation up to 100 MHz
• Narrow pulse-width capability enabling precise timing control down to 2 ns
• Zero reverse recovery charge (QRR) resulting in minimal switching losses

FET, MOSFET Arrays Applications

• Automotive LiDAR and Time-of-Flight (ToF) systems
• High-frequency DC-DC power converters
• Wireless power transfer amplifiers

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct tape and reel specifications. Confirm that the passive die form factor aligns with your assembly capabilities, as this component requires surface-mount placement with solder bumps. Ensure compliance with moisture sensitivity level classifications during storage and handling procedures.

FET, MOSFET Arrays Selection Notes

Select the EPC2221 when designing multi-channel applications requiring independent or parallel FET operation within a single package footprint. Consider its low gate charge and zero reverse recovery characteristics for high-efficiency, high-frequency designs. Evaluate thermal management requirements based on the junction-to-board resistance if top-side cooling is not utilized.

FET, MOSFET Arrays Part Context

The EPC2221 belongs to the eGaN® FET family designed for automotive reliability, holding AEC-Q101 certification. It utilizes Gallium Nitride technology to achieve superior electron mobility and low temperature coefficients compared to silicon alternatives. This component is part of Efficient Power Conversion's portfolio aimed at reducing system size and cost through high power density solutions.

FET, MOSFET Arrays Replacement Considerations

No official substitute part numbers are documented by the manufacturer. When evaluating alternatives, verify compatibility with the 100 V rating, 5 A current capacity, and dual common-source topology. Ensure any replacement supports the required narrow pulse-width operation and maintains similar thermal resistance characteristics for the target application.