ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS GAN 150V .003OHM 3X5MM QFN
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：102A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：3mOhm @ 30A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 11mA
- Gate Charge (Qg) (Max) @ Vgs：28.6 nC @ 5 V
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：4165 pF @ 75 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：7-QFN (3x5)
- Package / Case：7-PowerWQFN
Download product information
Overview
The EPC2305ENGRT is an enhancement-mode Gallium Nitride (eGaN®) power transistor rated for a drain-source voltage of 150 V. It features a maximum continuous drain current of 102 A at junction temperature and a typical on-resistance of 2.2 mΩ. The device is housed in a low-inductance 7-QFN (3x5 mm) package with an exposed top pad for thermal management. Key electrical parameters include a gate charge of 28.6 nC at 5 V, input capacitance of 4165 pF at 75 V, and a gate-source voltage range of +6 V to -4 V. It operates within a temperature range of -40°C to 150°C.
Feature Summary
- Enhancement-mode eGaN technology for high efficiency
- Low inductance 3x5 mm QFN package with exposed top
- High current handling capability up to 102 A
- Fast switching characteristics suitable for high-frequency applications
Applications
- High-frequency DC/DC converters
- AC/DC chargers and adapters
- Brushless DC motor drivers
- Electric mobility motor drives
- Class D audio amplifiers
Procurement Notes
Verify the specific suffix 'ENGRT' against the manufacturer's official datasheet to confirm it denotes the tape-and-reel packaging variant of the EPC2305. Ensure the ordering part number matches the exact package type and quantity specifications required for your assembly process. Cross-reference the RoHS status and ECCN classification for compliance requirements.
Selection Notes
Select this component when designing circuits requiring 150 V blocking capability with high current density. The low on-resistance and fast switching speeds make it suitable for applications prioritizing power density and efficiency. Consider the thermal performance of the exposed pad design for heat dissipation needs in compact form factors.
Part Context
The EPC2305 belongs to the eGaN FET family from Efficient Power Conversion (EPC). These transistors utilize Gallium Nitride technology to offer superior performance compared to traditional silicon MOSFETs. The EPC2305 specifically targets high-power applications where size and efficiency are critical constraints.
Replacement Considerations
Direct replacements must match the 150 V rating, 102 A current capacity, and 3x5 mm QFN package dimensions. Verify that any substitute device maintains compatible gate drive requirements and thermal characteristics to ensure circuit stability.
