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Product Detailed Parameters
- Description：TRANS GAN 100V .0038OHM3X5MM QFN
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：48A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：3.8mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs：16.3 nC @ 5 V
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：2366 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：7-QFN (3x5)
- Package / Case：7-PowerWQFN
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Overview
The EPC2306ENGRT is a gallium nitride field-effect transistor with a 100-volt drain-source voltage rating. It features a maximum on-resistance of 3.8 milliohms and utilizes a thermally enhanced QFN package measuring 3 by 5 millimeters. The device is footprint-compatible with the EPC2302, allowing designers to select components based on specific efficiency or cost requirements within the same physical layout.
Feature Summary
- Utilizes a thermally enhanced QFN package with an exposed top and footprint for high-power-density applications
- Footprint-compatible with the previously released 100-volt, 1.8 milliohm EPC2302 for design flexibility
- Offers low conduction and switching losses through small gate charge parameters
Applications
- 48-volt DC-DC conversion
- 48-volt brushless DC motor drives for e-mobility and robotics
- Solar optimizers and microinverters
- Class D audio systems
Procurement Notes
Verify the exact suffix against official manufacturer documentation to confirm the specific reel configuration and engineering sample status. Ensure the ordering part number matches the required package variant and thermal specifications. Cross-reference the datasheet revision date to confirm the most current electrical characteristics and mechanical drawings are applied to the procurement order.
Selection Notes
Select this component when a 100-volt GaN FET is required in a compact 3x5 mm form factor. The device allows trade-offs between on-resistance and cost compared to the footprint-compatible EPC2302. Evaluate the thermal performance of the exposed pad design for high-density power solutions where space constraints limit larger packages.
Part Context
This component belongs to the EPC series of enhancement-mode gallium nitride field-effect transistors manufactured by Efficient Power Conversion. These devices leverage silicon wafer infrastructure and standard CMOS processing equipment. The technology utilizes GaN's high electron mobility and low temperature coefficient to achieve efficient power switching in modern electronic designs.
Replacement Considerations
The EPC2302 is a confirmed footprint-compatible substitute within the same package. Designers may swap between these part numbers to adjust the balance between on-resistance and system cost without modifying the printed circuit board layout.
