EPC2307

Overview

The EPC2307 is a single N-channel enhancement-mode Gallium Nitride (GaN) field-effect transistor rated for 200 V drain-source voltage. It features a typical on-resistance of 10 mΩ and a continuous current rating of 48 A at ambient temperature, with a peak pulsed current capability of 63 A. The device utilizes a lateral eGaN structure to achieve high electron mobility and low temperature coefficient characteristics. It is housed in a compact 7-QFN package measuring 3 mm by 5 mm, designed for surface mount applications requiring efficient thermal management.

Feature Summary

• Enhancement-mode lateral GaN FET architecture providing exceptionally low on-resistance due to high electron mobility
• Thermally enhanced 7-QFN package design optimizing heat dissipation within a minimal 3x5 mm footprint
• Low temperature coefficient characteristic enabling stable performance across varying operating conditions

Applications

• High-resolution LiDAR and dToF systems requiring fast switching speeds
• Wireless power transfer systems demanding higher power density and extended range
• Class D audio amplifiers utilizing high-fidelity switching capabilities

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm exact pinout and thermal pad configuration. Ensure compatibility with gate drive requirements, specifically the 0.8 V to 2.5 V threshold voltage range. Confirm that the selected component variant matches the required 200 V rating and 10 mΩ on-resistance specifications for your circuit design.

Selection Notes

Select this component when designing circuits that benefit from the superior switching speed and low conduction losses of lateral GaN technology compared to traditional silicon MOSFETs. Consider the 3x5 mm QFN package constraints for PCB layout and thermal vias. Evaluate the 200 V breakdown voltage against system transient spikes to ensure adequate safety margins for the intended application environment.

Part Context

The EPC2307 belongs to Efficient Power Conversion Corporation's portfolio of enhancement-mode GaN power transistors. It represents an advancement in high-voltage GaN devices, offering improved current handling relative to previous generations while maintaining the small form factor essential for modern high-density power electronics and signal processing applications.

Replacement Considerations

Direct cross-replacement requires matching the 200 V rating, 10 mΩ RDS(on), and 7-QFN (3x5 mm) package. Verify gate threshold voltage compatibility (0.8-2.5 V) and thermal resistance characteristics. No direct equivalent part numbers are publicly confirmed in the provided source material.