EPC7004BSH

$342.30

Description：GAN FET HEMT
Series：eGaN®

SKU:d8d57d61e800 Category: RF FETs, MOSFETs Brand: EPC Space, LLC

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Product introduction

Product Detailed Parameters

Description：GAN FET HEMT
Series：eGaN®
Mfr：EPC Space, LLC
Package：Bulk
Technology：GaN HEMT
Frequency：-
Gain：-
Voltage - Test：50 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：30 A
Power - Output：-
Voltage - Rated：100 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：4-SMD, No Lead
Supplier Device Package：4-SMD
Configuration：N-Channel

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EPC7004BSH

Overview

The EPC7004BSH is a rad-hard eGaN power switching HEMT from the FSMD-B series. It features an N-channel enhancement mode configuration with a drain-source voltage of 100 V and a continuous drain current of 46 A at case temperature. The device exhibits a typical on-resistance ranging from 13 to 16 mΩ. Gate charge is specified at 11 nC at 5 V. The component utilizes a 4-SMD surface mount package.

Feature Summary

Rad-hardened design suitable for high-reliability environments
Enhancement mode operation using eGaN technology
Surface mount packaging for automated assembly

Applications

Space DC-DC power conversion
Satellite motor drives
Lidar systems
Ion thrusters
Commercial satellite avionics

Procurement Notes

Verify that the specific BSH suffix corresponds to the required radiation hardness level and package variant. Confirm that the 10-week standard lead time aligns with project schedules. Ensure compatibility with space-grade quality control requirements and traceability standards before finalizing procurement orders.

Selection Notes

Select this component when radiation tolerance is mandatory for space or high-altitude operations. The 100 V rating supports various bus voltages in satellite power systems. Consider the low gate charge for high-frequency efficiency requirements in avionics and propulsion applications where weight and size are constrained.

Part Context

This part belongs to EPC's rad-hard GaN FET family designed for demanding space applications. It complements other commercial eGaN devices by offering enhanced durability against radiation effects. The FSMD-B package provides a standardized footprint for integration into satellite power electronics and deep space probe systems.

Replacement Considerations

No public confirmed substitute part numbers are available. Direct replacement requires matching rad-hard specifications and radiation tolerance levels. Verify interface compatibility and thermal performance with existing system designs before considering alternative components.