ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：GAN FET HEMT200V18A COTS 4FSMD-B
- Series：eGaN®
- Mfr：EPC Space, LLC
- Package：Bulk
- Technology：GaN HEMT
- Frequency：-
- Gain：-
- Voltage - Test：100 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：18 A
- Power - Output：-
- Voltage - Rated：200 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：4-SMD, No Lead
- Supplier Device Package：4-SMD
- Configuration：N-Channel
Download product information
FAQ
What is the primary function of the EPC7007BC?
The EPC7007BC is a high-efficiency Gallium Nitride (GaN) power transistor designed for advanced power conversion applications.
What material technology does the EPC7007BC utilize?
It utilizes EPC's proprietary eGaN FET technology, which offers superior switching speeds and lower on-resistance compared to traditional silicon MOSFETs.
Is the EPC7007BC suitable for high-frequency operation?
Yes, the device is specifically engineered for high-frequency switching, enabling significant reductions in passive component size and weight in power supplies.
