EPC7018GSH

$354.37

Description：GAN FET HEMT 100V 90A 5UB
Series：eGaN®

SKU:98b06e0ae06f Category: RF FETs, MOSFETs Brand: EPC Space, LLC

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Product introduction

Product Detailed Parameters

Description：GAN FET HEMT 100V 90A 5UB
Series：eGaN®
Mfr：EPC Space, LLC
Package：Bulk
Technology：GaN HEMT
Frequency：-
Gain：-
Voltage - Test：50 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：40 A
Power - Output：-
Voltage - Rated：100 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：5-SMD, No Lead
Supplier Device Package：5-SMD
Configuration：N-Channel

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EPC7018GSH

Overview

The EPC7018GSH is a hermetically sealed RF FET manufactured by EPC Space, LLC. It features a 100 V drain-source voltage rating and an 80 A continuous current capability with a 6.0 mΩ on-resistance. The device utilizes a compact dual-gate surface-mount package designed for high-efficiency switching applications.

Feature Summary

Ultra-low gate charge for high efficiency
Logic level gate drive compatibility
Compact hermetic package with dual gate configuration
Source sense pin integration

Applications

Satellite power systems
Front-end DC-DC converters
High-efficiency RF switching circuits

Procurement Notes

Verify the specific datasheet version to confirm total ionizing dose LDR specifications. Ensure the hermetic seal integrity meets mission requirements. Confirm logic-level gate drive compatibility with existing driver circuits before finalizing procurement.

Selection Notes

Select this component for applications requiring high current handling in a radiation-tolerant environment. The dual-gate design offers flexibility in control schemes. Consider the thermal performance of the hermetic package for heat dissipation needs in space-constrained designs.

Part Context

This part belongs to EPC's family of radiation-hardened GaN power semiconductors. It is designed for demanding aerospace and defense applications where reliability and efficiency are critical. The hermetic packaging distinguishes it from standard commercial variants.