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Product Detailed Parameters
- Description：GAN FET HEMT 40V 95A COTS 5UB
- Series：eGaN®
- Mfr：EPC Space, LLC
- Package：Bulk
- Technology：GaN HEMT
- Frequency：-
- Gain：-
- Voltage - Test：20 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：50 A
- Power - Output：-
- Voltage - Rated：40 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：5-SMD, No Lead
- Supplier Device Package：5-SMD
- Configuration：N-Channel
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Overview
The EPC7019GC is a radiation-hardened Gallium Nitride High Electron Mobility Transistor (GaN HEMT) manufactured by EPC Space, LLC. It is an N-Channel device designed for high-power applications in demanding environments. Key electrical specifications include a drain-to-source voltage (Vdss) of 40 V and a continuous drain current (Id) of 90 A at case temperature. The device features a low on-resistance ranging from 3.7 to 4.5 mΩ. It utilizes the eGaN® technology platform and is housed in a surface-mount FSMD-G package.
Feature Summary
- Radiation-hardened design suitable for space missions
- High-efficiency GaN power transistor architecture
- Low on-resistance for reduced conduction losses
Applications
- Satellite power systems
- Deep space mission power electronics
- Rad-hard power conversion circuits
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm radiation hardness screening levels and quality documentation prior to procurement. Ensure storage conditions meet semiconductor handling standards to preserve device integrity and performance specifications.
Selection Notes
Select this component for applications requiring radiation tolerance and high-frequency switching efficiency. Evaluate thermal management requirements given the 90 A current rating. Compare on-resistance values against system loss constraints. Ensure gate drive compatibility with GaN device characteristics.
Part Context
This part belongs to the eGaN® series of power transistors from EPC Space. It represents a specialized variant engineered for aerospace and defense sectors where standard commercial components fail due to radiation exposure. The FSMD-G package facilitates surface mounting in compact power modules.
Replacement Considerations
No public confirmed substitute part numbers are available. Due to the specific radiation-hardening requirements and unique GaN technology, direct pin-compatible replacements may not exist without redesigning the power stage.
