EPC7020GSH

Overview

The EPC7020GSH is a gallium nitride (GaN) transistor designed for space applications, featuring a hermetic radiation-hardened package. It belongs to the EPC Space GaN series and handles up to 200 A pulse current. The device withstands 200 V voltage with an on-resistance of 14.5 mΩ.

Feature Summary

• Hermetically sealed radiation-hardened packaging
• High pulse current handling capability
• Small footprint design

Applications

• Space power systems
• Motor drives
• Scientific instrumentation

Procurement Notes

Verify the specific suffix 'SH' against official EPC Space documentation to confirm exact pinout, lead finish, or qualification level differences from the standard EPC7020G. Ensure the component meets required radiation tolerance specifications for the intended mission environment before procurement.

Selection Notes

Select this component when high efficiency and small size are critical in a space-constrained environment requiring radiation hardness. Compare its 14.5 mΩ on-resistance and 200 V rating against alternative silicon MOSFETs to evaluate performance improvements in power density and switching speed.

Part Context

This part extends the EPC70XX GaN transistor family by adding robustness for harsh environments. It complements the EPC7030G model, which offers higher voltage ratings. Both devices leverage physical GaN advantages within specialized packaging to enhance reliability for aerospace and defense electronics.

Replacement Considerations

No verified public substitute part numbers are available.