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Product Detailed Parameters
- Description：GANFET N-CH 65V 2A DIE
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：65 V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：530mOhm @ 500mA, 5V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：21 pF @ 32.5 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The EPC8002 is an enhancement-mode N-channel Gallium Nitride Field-Effect Transistor (GaN FET) manufactured by Efficient Power Conversion Corporation. It features a 65V drain-source breakdown voltage and supports a continuous drain current of 2A at ambient temperature. The device utilizes a low-inductance 3mm x 5mm QFN package with an exposed top pad for thermal management. Designed for high-efficiency power conversion, it offers fast switching capabilities to reduce losses in DC-DC converters and power supplies.
Feature Summary
- Enhancement-mode N-channel GaN technology enabling zero reverse recovery loss
- Low-inductance surface mount package designed for excellent thermal performance
- Fast switching characteristics that reduce switching losses and drive power requirements
Applications
- High-frequency DC-DC converters
- Efficient power supply designs
- Multi-megahertz power conversion applications
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct pinout and packaging configuration. Confirm that the component matches the required 65V rating and LGA-6 package dimensions for your PCB layout. Cross-reference the part number with authorized distributors to avoid counterfeit components. Ensure gate drive circuits are compatible with the specified threshold voltage levels.
Selection Notes
Select this component when designing systems requiring high power density and efficiency at multi-megahertz frequencies. The low gate charge and fast switching speed make it suitable for applications where minimizing switching losses is critical. Consider the thermal requirements of the exposed pad design for adequate heat dissipation in compact form factors.
Part Context
This component belongs to the EPC eGaN FET family, which leverages Gallium Nitride technology to outperform traditional silicon MOSFETs in switching speed and efficiency. The EPC8002 specifically targets low-voltage, high-current applications where size and thermal performance are constrained. It represents a shift towards wider bandgap semiconductors in modern power electronics.
Replacement Considerations
Consult the official EPC substitution guide for verified equivalents. Direct replacements must match the 65V rating, N-channel polarity, and LGA-6 package footprint. Verify that any substitute maintains comparable gate charge and on-resistance specifications to preserve circuit performance.
