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Product Detailed Parameters
- Description：MOSFET P-CH 20V 1A 6WEMT
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：390mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：2.1 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：150 pF @ 10 V
- FET Feature：Schottky Diode (Body)
- Power Dissipation (Max)：700mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-WEMT
- Package / Case：6-SMD, Flat Leads
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Overview
The ES6U42T2R is a single-channel P-Channel MOSFET manufactured by ROHM Semiconductor, designed for surface-mount applications. It features a drain-source breakdown voltage of 20V and a continuous drain current rating of 1A. The component is housed in a compact 6-pin WEMT package, suitable for space-constrained designs. Key electrical characteristics include a maximum power dissipation of 150mW and an operating temperature range extending up to +150°C. This device integrates a built-in diode configuration, enhancing its utility in switching and protection circuits within portable electronics and industrial control systems.
