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The F3L11MR12W2M1B65BOMA1 is an Infineon Technologies IGBT module belonging to the LOW POWER EASY series. It features a three-level inverter configuration with a 1200 V breakdown voltage and 11 A continuous collector current. The device utilizes silicon technology and employs press-fit installation for secure mounting. Operating within a temperature range of -40°C to +150°C, it integrates negative temperature coefficient characteristics for thermal stability. This component is designed for efficient power conversion in compact applications.
Verify end-of-life status before design finalization as this component is obsolete. Confirm compatibility with existing cooling solutions and gate drive requirements. Ensure supply chain alternatives are identified due to discontinuation. Validate electrical parameters against original system specifications to maintain performance integrity during transition planning.
Select this module for applications requiring three-level inverter topologies with moderate current ratings. Consider its press-fit mounting for vibration-resistant designs. Evaluate thermal performance at maximum operating temperatures. Compare against newer generations for long-term availability and improved efficiency metrics suitable for modern power electronics.
This part belongs to Infineon's CoolSiC and EasyDUAL families, specifically designed for low-power easy integration. It represents a legacy product line transitioning out of production. The module format supports space-constrained designs while maintaining robust electrical characteristics typical of industrial-grade semiconductor components.
Consult official documentation for direct substitutes. Verify pinout compatibility and thermal resistance values when selecting alternative components from updated product lines.