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Product Detailed Parameters
- Description：IGBT MOD 1200V 75A 500W
- Series：EasyPACK™
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：Three Phase Inverter
- Vce(on) (Max) @ Vge, Ic：1.75V @ 15V, 75A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：75 A
- Power - Max：500 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：8.7 nF @ 25 V
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Overview
The Infineon F3L150R12W2H3B11BPSA1 is a High Speed IGBT H3 module featuring active Neutral Point Clamp 2 topology. It provides a collector-emitter voltage of 1200 V and a nominal continuous current of 75 A at 100°C, with a repetitive peak current of 150 A. The device utilizes PressFIT contact technology and includes an integrated NTC thermistor for thermal monitoring. Operating junction temperatures range from -40°C to 150°C. Key electrical parameters include a typical saturation voltage of 1.55 V at 25°C and a total power dissipation of 500 W.
Feature Summary
- Active Neutral Point Clamp 2 topology designed for three-level applications
- PressFIT connection technology for reliable mechanical mounting
- Integrated NTC thermistor for precise temperature monitoring
Applications
- Three-level inverter systems
- Solar energy applications
Procurement Notes
Verify the specific ordering suffix B11 against official documentation to confirm the inclusion of PressFIT contacts and NTC integration. Ensure that the requested quantity aligns with standard factory packaging configurations. Confirm RoHS compliance status and UL approval details directly with the manufacturer or authorized distributors before finalizing procurement orders.
Selection Notes
Select this component for designs requiring high-speed switching capabilities within three-level topologies. Evaluate the thermal resistance values and maximum operating temperature limits to ensure adequate heat sinking. Verify gate drive requirements against the specified threshold voltages and internal gate resistance characteristics for optimal performance.
Part Context
This part belongs to the EasyPACK series of IGBT modules manufactured by Infineon Technologies. It represents the High Speed IGBT H3 generation, optimized for low switching losses. The module integrates both IGBTs and diodes into a single compact package suitable for industrial power conversion.
Replacement Considerations
Consult official Infineon cross-reference documents for verified substitute part numbers. Do not assume functional equivalence based solely on voltage and current ratings without verifying topology and pinout compatibility.
