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The F3L200R12W2H3BOMA1 is a High Speed IGBT H3 module utilizing active Neutral Point Clamp 2 topology. It features PressFIT and NTC integration within an EasyPACK housing. The main IGBTs (T1/T4) support a collector-emitter voltage of 1200 V, with a continuous DC current of 100 A at 100°C case temperature and a repetitive peak current of 200 A. The clamping IGBTs (T2/T3) are rated for 650 V with a continuous DC current of 100 A. The module operates up to a junction temperature of 150°C.
Verify the specific ordering suffix against official Infineon documentation to confirm mechanical and electrical compatibility. Confirm that the component matches the required insulation class and thermal resistance specifications for the target application environment before finalizing procurement.
Select this module for designs requiring high-speed switching capabilities in three-level topologies. Ensure the gate driver circuitry supports the specified internal gate resistance values. Verify that the system's thermal management can handle the junction-to-case thermal resistance under maximum load conditions.
This component belongs to the Infineon EasyPACK series, designed for industrial power conversion. It utilizes trench field-stop technology to optimize switching losses and on-state voltage. The module integrates multiple semiconductor chips into a single insulated package for efficient power handling.
Consult official Infineon cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout, thermal characteristics, and voltage ratings.