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The F3L400R07ME4B23BOSA1 is an IGBT module from Infineon Technologies, belonging to the Trench/Fieldstop IGBT4 series within the EconoDUAL family. It features a half-bridge configuration with a collector-emitter maximum voltage (VCEO) of 650 V and a continuous collector current of 450 A at 25°C. The saturation voltage is 1.55 V, with a power dissipation of 1.15 kW. Operating temperatures range from -40°C to +150°C. The component utilizes silicon technology and is housed in a tray package.
Verify the specific suffix B23 against official documentation, as standard listings often reference the B22 variant. Confirm availability status, as this model may be subject to end-of-life notices or obsolescence. Ensure compatibility with existing gate driver requirements and thermal interface materials before procurement.
Select this module for applications requiring high current capacity up to 450 A and robust 650 V blocking capability. Consider the 1.55 V saturation voltage for conduction loss calculations. Verify that the system design accommodates the specified 1.15 kW power dissipation and operates within the -40°C to +150°C temperature range.
This component is part of Infineon's EconoDUAL family, designed for medium-power industrial applications. It belongs to the IGBT4 generation, which offers improved switching characteristics compared to previous generations. The half-bridge configuration simplifies circuit design for single-phase or three-phase inverter topologies.
The F3L400R07ME4_B22 is a closely related variant within the same series. Verify pinout compatibility and electrical parameter equivalence before substitution. Other EconoDUAL modules with similar ratings may require mechanical and thermal redesign.