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The F3L75R07W2E3_B11 is a silicon-based IGBT module from Infineon Technologies, belonging to the Trenchstop IGBT3 series and housed in an EasyPACK package. It features a three-phase inverter configuration with a maximum collector-emitter voltage of 650 V. The device exhibits a typical collector-emitter saturation voltage of 1.45 V and supports a continuous collector current of 95 A at 25°C. Power dissipation is rated at 250 W, while gate-emitter leakage current remains at 400 nA. The module operates within a temperature range of -40°C to +150°C and weighs 39 grams.
Verify the specific ordering suffix against official Infineon documentation to confirm exact pinout and thermal characteristics. Confirm RoHS compliance status through the manufacturer's latest material content data sheet before finalizing procurement specifications.
Select this component when a 650 V rating and high current capacity are required for three-phase applications. Ensure the thermal management solution accommodates the 250 W power dissipation rating and that the operating environment stays within the specified -40°C to +150°C junction temperature limits.
This module is part of Infineon's Trenchstop IGBT3 family, which utilizes field-stop technology to reduce switching losses. The EasyPACK form factor provides a standardized footprint suitable for various industrial power conversion designs requiring robust performance in medium-power applications.
Consult official cross-reference guides for direct replacements. Verify electrical parameters and pin compatibility carefully when considering alternative models from other manufacturers or different generations within the same brand.