F4-50R07W2H3_B51

Overview

The F4-50R07W2H3_B51 is an EasyBRIDGE IGBT module integrating CoolMOS technology with PressFIT and NTC features. It provides a collector-emitter voltage of 650 V, a nominal current of 50 A, and a repetitive peak current of 100 A. The inverter IGBT exhibits a saturation voltage of 1.40 V at 25°C and 25 A. The integrated boost diode has a forward voltage of 1.50 V at 25°C and 16 A. The CoolMOS switch offers an on-resistance of 42 mΩ at 25°C and 30 A. Thermal resistance from junction to case is 0.70 K/W for the IGBT and 1.35 K/W for the boost diode.

Feature Summary

• Low-inductive design architecture
• Integrated NTC temperature sensor
• PressFIT contact technology

Applications

• Solar applications

Procurement Notes

Verify component authenticity by cross-referencing the barcode code and DMX code printed on the module label against official Infineon documentation. Confirm that the serial number and production order number match the specific batch records. Ensure the datasheet revision aligns with the requested technical specifications before finalizing procurement orders.

Selection Notes

Select this module for designs requiring a 650 V blocking capability combined with low switching losses. Verify that the continuous DC collector current rating of 25 A at 75°C case temperature meets the thermal management requirements. Ensure the PCB layout accommodates the PressFIT connection method and the specified mounting force range of 40 to 80 Newtons per spring.

Part Context

This component belongs to the EasyBRIDGE series manufactured by Infineon Technologies. It combines standard IGBTs with CoolMOS switches and bypass diodes within a single compact package. The module utilizes Al2O3 substrates to provide low thermal resistance and high insulation test voltage capabilities for robust power conversion systems.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.