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The F4100R17N3E4BPSA1 is an EconoPACK™3 module featuring Trench/Fieldstop IGBT4 technology and an Emitter Controlled Diode. It has a collector-emitter voltage (VCES) of 1700 V, a continuous DC collector current (ICDC) of 100 A at TC=100°C, and a repetitive peak collector current (ICRM) of 200 A. The saturation voltage (VCEsat) ranges from 1.95 V to 2.45 V depending on temperature. Switching losses include turn-on energy (Eon) up to 29.1 mJ and turn-off energy (Eoff) up to 34.1 mJ at Tvj=150°C. Thermal resistance from junction to case is 0.256 K/W per IGBT. An integrated NTC thermistor with a nominal resistance of 5.00 kΩ at 25°C provides temperature monitoring.
Verify the exact ordering suffix against official Infineon documentation to confirm package type and internal configuration. Ensure compliance with RoHS3 standards and check for specific application notes regarding mounting torque and thermal interface material requirements before procurement.
Select this component for applications requiring high voltage blocking capability and robust short-circuit withstand characteristics. Evaluate the thermal resistance values and stray inductance specifications to ensure compatibility with the intended heatsink design and gate drive circuitry constraints.
This module belongs to the EconoPACK™3 series, designed for compact integration in modern power electronics. It utilizes advanced IGBT4 technology to achieve low conduction and switching losses within a standard housing format suitable for industrial and automotive power conversion systems.
Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement matches the 1700 V rating, 100 A current capacity, and EconoPACK™3 mechanical footprint.