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F411MR12W2M1B76BOMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 4N-CH 1200V AG-EASY1B. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for F411MR12W2M1B76BOMA1
- Description：MOSFET 4N-CH 1200V AG-EASY1B
- Series：EasyPACK™ CoolSiC™
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- Technology：Silicon Carbide (SiC)
- Configuration：4 N-Channel (Full Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：100A (Tj)
- Rds On (Max) @ Id, Vgs：11.3mOhm @ 100A, 15V
- Vgs(th) (Max) @ Id：5.55V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs：248nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds：7360pF @ 800V
- Power - Max：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-EASY1B-2
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for F411MR12W2M1B76BOMA1
FET, MOSFET Arrays Overview
The F411MR12W2M1B76BOMA1 is a CoolSiC MOSFET four-pack module from Infineon Technologies, designed for high-efficiency power conversion. It features a 1200 V drain-source voltage rating and utilizes Silicon Carbide technology. The module integrates four independent N-channel MOSFETs in a compact package, offering low on-resistance and fast switching characteristics suitable for demanding industrial applications.
FET, MOSFET Arrays Feature Summary
- Integrates four independent CoolSiC MOSFETs within a single module structure
- Utilizes Silicon Carbide semiconductor technology for enhanced thermal performance
- Features press-fit termination style for secure mechanical mounting
FET, MOSFET Arrays Applications
- Industrial motor drives
- Uninterruptible power supplies
- High-frequency DC-DC converters
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix BOMA1 against official Infineon documentation to confirm exact pinout and thermal interface specifications. Ensure compatibility with existing PCB layouts and cooling systems before integration. Cross-reference datasheet revisions to avoid obsolescence issues during production planning.
FET, MOSFET Arrays Selection Notes
Select this component when high switching frequency and reduced conduction losses are critical. The four-pack configuration allows for complex bridge topologies or parallel operation within a single footprint. Evaluate thermal management requirements based on the module's power dissipation capabilities under expected load conditions.
FET, MOSFET Arrays Part Context
This part belongs to Infineon's CoolSiC MOSFET module family, specifically utilizing the AG-EASY2B package form factor. It represents a progression in silicon carbide power modules, offering higher current density compared to earlier generations while maintaining robust reliability standards for industrial environments.
FET, MOSFET Arrays Replacement Considerations
Publicly confirmed substitute part numbers for this specific model variant are not available in the provided reference data. Consult official Infineon replacement guides for direct equivalents or functional alternatives.
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