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The F4150R17ME4B11BPSA2 is an EconoDUAL™3 IGBT module featuring Trench/Fieldstop IGBT4 technology and emitter-controlled diodes. It provides a collector-emitter voltage of 1700 V, a nominal continuous DC collector current of 150 A at 100°C case temperature, and a repetitive peak current of 300 A. The saturation voltage ranges from 1.95 V to 2.45 V depending on junction temperature. Operating temperatures span from -40°C to +150°C. Key electrical parameters include a gate threshold voltage of 5.80 V typical, input capacitance of 12 nF, and short-circuit withstand capability up to 630 A for 10 µs.
Verify the specific ordering suffix against official Infineon documentation to ensure correct configuration. Confirm that the component meets all relevant industrial qualification standards, including IEC 60747, 60749, and 60068, prior to integration into final designs.
Select this module for applications requiring high short-circuit capability and high DC stability. Ensure the cooling system maintains the case temperature within specified limits to achieve the rated 150 A continuous current. Verify compatibility with recommended gate drivers using the manufacturer's selection tool.
This component belongs to the EconoDUAL™3 series, designed for medium-power industrial applications. It integrates four-pack configurations suitable for inverter bridges. The module utilizes silicon technology optimized for efficiency and reliability in demanding power conversion environments.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon resources for cross-reference information or updated product recommendations.