F417MR12W1M1HPB76BPSA1

F417MR12W1M1HPB76BPSA1

$91.49
  • Description:LOW POWER EASY
  • Series:-

SKU:c1d289aeda06 Category: Brand:

  
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Product Detailed Parameters

  • Description:LOW POWER EASY
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • IGBT Type:-
  • Configuration:-
  • Vce(on) (Max) @ Vge, Ic:-
  • Input:-
  • NTC Thermistor:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Current - Collector (Ic) (Max):-
  • Power - Max:-
  • Current - Collector Cutoff (Max):-
  • Input Capacitance (Cies) @ Vce:-

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F417MR12W1M1HPB76BPSA1

Overview

The F417MR12W1M1HPB76BPSA1 is a CoolSiC Trench MOSFET half-bridge module in the EasyPACK™ package. It features a 1200 V drain-source voltage and a continuous DC current of 45 A at 175 °C junction temperature. The device incorporates PressFIT technology with pre-applied thermal interface material and integrated mounting clamps. Electrical characteristics include a typical on-resistance of 16.2 mΩ at 25 °C, low switching losses, and an internal gate resistance of 4.1 Ω. An integrated NTC thermistor provides temperature monitoring.

Feature Summary

  • Utilizes CoolSiC Trench MOSFET technology for high efficiency and low switching losses.
  • Features PressFIT contact technology combined with rugged integrated mounting clamps.
  • Includes pre-applied thermal interface material to simplify assembly.
  • Integrates an NTC temperature sensor for precise thermal management.

Applications

  • Welding equipment
  • DC chargers for electric vehicles
  • DC/DC converters
  • High-frequency switching applications

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's part number and checking the module label code against official documentation. Ensure that the ordering suffix matches the specific variant required for the application. Confirm compliance with industrial qualification standards such as IEC 60747 prior to integration into final designs.

Selection Notes

Select this module for applications requiring high power density and robust mechanical mounting. Consider the 1200 V rating and 45 A continuous current capability when designing thermal management systems. Verify that the gate drive voltages align with the recommended operating range of -5 to 0 V for off-state and 15 to 18 V for on-state conditions.

Part Context

This component belongs to Infineon's CoolSiC™ product family, specifically utilizing the EasyPACK™ form factor. It represents a generation of silicon carbide modules designed to replace traditional silicon devices in high-performance power electronics. The M1H series designation indicates specific technological improvements in trench gate architecture.

Replacement Considerations

Direct replacements within the same EasyPACK™ footprint may include other 1200 V CoolSiC half-bridge modules from the M1H series. Verify pinout compatibility and thermal resistance specifications before substitution. Consult official replacement guides for equivalent performance metrics.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature (Tvj op) is 175 °C.

How is the module mechanically mounted?

The module uses PressFIT contact technology and includes integrated mounting clamps for secure attachment to the heatsink.

Does the module include a temperature sensor?

Yes, it integrates an NTC thermistor with a rated resistance of 5 kΩ at 25 °C.

F417MR12W1M1HPB76BPSA1F417MR12W1M1HPB76BPSA1
$91.49
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