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The F423MR12W1M1B11BOMA1 is a CoolSiC Module IGBT featuring Trench Full Bridge technology. It utilizes screw mount installation within an Easy1B-2 package. The device supports dual N-Channel configuration with a Vds of 1.2 kV and Id of 25 A. Rds(on) is 45 mOhms, with Vgs thresholds at 3.5 V. Operating temperatures range from -40 C to +150 C. Switching characteristics include 13 ns fall time and 7.2 ns rise time. Delay times are 38.5 ns (off) and 11.5 ns (on). Vf is 4.6 V.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm RoHS compliance status via current datasheets. Check end-of-life notifications as discontinuance may affect long-term supply. Validate package markings against official specifications to prevent counterfeit substitution during acquisition.
Evaluate thermal management requirements against the +150 C maximum junction temperature limit. Ensure gate drive voltage aligns with the specified Vgs range for optimal switching efficiency. Consider the 45 mOhms on-resistance for conduction loss calculations in low-current applications. Verify mechanical mounting compatibility with the Easy1B-2 screw mount interface.
This module belongs to Infineon's CoolSiC family, combining silicon carbide benefits with IGBT topology. It targets applications requiring robust switching capabilities in compact footprints. The Easy1B-2 packaging facilitates standardized thermal and electrical connections. It represents a specialized solution for mid-power industrial electronics demanding high reliability.
No public confirmed substitute part numbers are available in the provided documentation.