F423MR12W1M1B76BPSA1

$84.01

Description：MOSFET 4N-CH 1200V 45A AG-EASY1B
Series：EasyPACK™ CoolSiC™

SKU:b5459792102e Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

F423MR12W1M1B76BPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 4N-CH 1200V 45A AG-EASY1B. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for F423MR12W1M1B76BPSA1

Description：MOSFET 4N-CH 1200V 45A AG-EASY1B
Series：EasyPACK™ CoolSiC™
Mfr：Infineon Technologies
Package：Tray
Technology：Silicon Carbide (SiC)
Configuration：4 N-Channel (Full Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：45A (Tj)
Rds On (Max) @ Id, Vgs：22.5mOhm @ 50A, 15V
Vgs(th) (Max) @ Id：5.55V @ 20mA
Gate Charge (Qg) (Max) @ Vgs：124nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds：3680pF @ 800V
Power - Max：-
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：AG-EASY1B-2
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for F423MR12W1M1B76BPSA1

F423MR12W1M1B76BPSA1

FET, MOSFET Arrays Overview

The F423MR12W1M1B76BPSA1 is a CoolSiC™ Trench MOSFET half-bridge module in the EasyPACK™ package. It features a 1200 V drain-source voltage and a nominal current of 50 A, with a repetitive peak current rating of 100 A. The device incorporates PressFIT contact technology and an integrated NTC temperature sensor. Electrical characteristics include a typical on-resistance of 22.5 mΩ at 25 °C and low switching losses optimized for high-frequency operation.

FET, MOSFET Arrays Feature Summary

Utilizes CoolSiC™ Trench MOSFET technology for high efficiency
Features PressFIT contact technology for robust mounting
Includes an integrated NTC thermistor for thermal monitoring
Designed with low stray inductance to minimize switching losses

FET, MOSFET Arrays Applications

Welding equipment
DC chargers for electric vehicles
DC/DC converters
High frequency switching applications

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision and product status before procurement. Confirm that the application environment complies with industrial qualification standards such as IEC 60747, 60749, and 60068. Ensure gate drive voltages adhere to the specified limits to maintain long-term device reliability.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring high current density and rugged mounting solutions. Consider the thermal resistance and operating temperature range when designing the heatsink interface. Verify that the system's DC bus voltage does not exceed the 1200 V rating under all transient conditions.

FET, MOSFET Arrays Part Context

This part belongs to Infineon's CoolSiC™ family, utilizing silicon carbide semiconductor technology. It is housed in the EasyPACK™ form factor, which supports PressFIT assembly methods. The module is intended for industrial power electronics applications where high reliability and compact design are required.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon documentation for qualified substitute part numbers within the same series or package type. Verify electrical parameters and pinout compatibility before implementing any alternative components.