SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The F4250R17MP4B11BPSA2 is an EconoDUAL™3 IGBT module utilizing Trench/Fieldstop IGBT4 technology. It features a collector-emitter voltage of 1700 V, a nominal continuous DC collector current of 250 A at 100°C case temperature, and a repetitive peak current of 500 A. The module incorporates emitter-controlled diodes with low forward voltage. Key electrical parameters include a saturation voltage of 1.80 V to 2.30 V and short-circuit withstand capability of 1300 A for up to 10 µs. Thermal resistance from junction to case is 0.101 K/W for the IGBT and 0.215 K/W for the diode. Operating junction temperature ranges from -40°C to 150°C.
Verify component authenticity by checking the Data Matrix barcode on the module housing against Infineon records. Confirm the specific ordering suffix matches the required technical specifications. Ensure compliance with industrial qualification standards such as IEC 60747 and IEC 60068 prior to integration into final equipment designs.
Select this module for applications requiring high power density and robust short-circuit handling. Ensure the gate driver selection aligns with the recommended operating conditions for Trench/Fieldstop IGBT4. Verify that the cooling system can maintain the case temperature within limits to sustain the 250 A continuous current rating effectively.
This component belongs to the EconoDUAL™3 family, designed for high-power industrial applications. It represents an evolution in silicon-based power modules, offering improved efficiency over previous generations through advanced trench gate technology. The form factor is standardized for easy mounting in common converter topologies.
Direct pin-to-pin replacements within the same package family should be verified against the latest datasheet revisions. Check if newer generation modules offer improved thermal or electrical performance while maintaining identical mechanical dimensions and pinout configurations.