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Product Detailed Parameters
- Description：LOW POWER EASY
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：-
- Vce(on) (Max) @ Vge, Ic：-
- Input：-
- NTC Thermistor：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Power - Max：-
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：-
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Overview
The F433MR12W1M1HB76BPSA1 is a CoolSiC Trench MOSFET module in the EasyPACK™ package. It features a drain-source voltage (VDSS) of 1200 V and a continuous DC drain current (IDDC) of 25 A at 175 °C junction temperature. The typical on-state resistance (RDS(on)) is 32.3 mΩ at 25 °C, rising to 69.4 mΩ at 175 °C. The module includes an integrated NTC thermistor with a rated resistance of 5 kΩ at 25 °C. Electrical characteristics include a gate threshold voltage of 4.3 V typ., turn-on energy loss of 0.377 mJ, and turn-off energy loss of 0.064 mJ under standard test conditions.
Feature Summary
- Utilizes CoolSiC Trench MOSFET technology for low switching losses and high current density.
- Incorporates PressFIT contact technology combined with integrated mounting clamps for rugged installation.
- Features an integrated NTC temperature sensor for precise thermal monitoring.
- Designed with low stray inductance to support high-frequency switching applications.
Applications
- Welding equipment
- EV DC chargers
- DC/DC converters
- High-frequency switching applications
Procurement Notes
Verify component authenticity by cross-referencing the Data Matrix barcode on the module label against Infineon's official traceability standards. Confirm that the specific ordering suffix matches the required technical specifications, as variations may exist within the product family. Ensure compliance with industrial qualification requirements defined in IEC 60747, 60749, and 60068 before integration into final systems.
Selection Notes
Select this module for applications requiring high-temperature operation up to 175 °C and robust mechanical mounting via PressFIT terminals. Evaluate the thermal resistance from junction to heatsink (1.82 K/W) against the system's cooling capabilities. Consider the specific gate voltage recommendations (-5 to 0 V off-state, 15 to 18 V on-state) to optimize switching performance and ensure long-term reliability of the MOSFET and body diode.
Part Context
This component belongs to the Infineon EasyPACK™ series, designed for compact power electronics. It integrates Silicon Carbide (SiC) technology to enhance efficiency compared to traditional silicon devices. The module is specifically engineered for industrial environments, offering high insulation voltage and reliable performance in demanding power conversion scenarios.
Replacement Considerations
Consult official Infineon documentation for qualified substitute part numbers. Verify compatibility regarding pin configuration, thermal resistance, and electrical ratings before substituting any alternative components.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature (Tvj op) is 175 °C.
How does the on-state resistance vary with temperature?
The typical RDS(on) increases from 32.3 mΩ at 25 °C to 69.4 mΩ at 175 °C when measured at ID = 25 A and VGS = 18 V.
What are the recommended gate voltage settings?
The recommended on-state gate voltage is 15 to 18 V, and the off-state gate voltage should be set between -5 V and 0 V.
