F435MR07W1D7S8B11ABPSA1

FET, MOSFET Arrays Overview

The Infineon F4-35MR07W1D7S8_B11/A is an EasyPACK™ 1B power module integrating CoolMOS™ CFD7A Automotive MOSFETs with PressFIT contacts and an NTC sensor. It features a 650 V drain-source voltage, 35 A nominal drain current, and 70 A repetitive peak current. The module includes an integrated snubber capacitor rated at 66 nF and 630 V DC. Thermal resistance from junction to heatsink is 0.992 K/W per switch. Qualified under AQG 324, it supports operation up to 150 °C junction temperature.

FET, MOSFET Arrays Feature Summary

• Integrates CoolMOS™ CFD7A technology for low switching losses and high efficiency
• Utilizes PressFIT contact technology for robust mechanical mounting
• Includes an integrated NTC thermistor for precise temperature monitoring
• Features built-in snubber circuitry to reduce electromagnetic interference

FET, MOSFET Arrays Applications

• Automotive auxiliary applications
• DC chargers for electric vehicles
• High-frequency switching applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the official datasheet to confirm interface type and thermal characteristics. Ensure compatibility with the required mounting force of 20 to 50 N per clamp. Confirm that the application environment meets the specified operating temperature range of -40 °C to 150 °C. Check insulation coordination requirements against the 2.5 kV isolation test voltage specification.

FET, MOSFET Arrays Selection Notes

Select this module for designs requiring automotive-grade reliability and compact form factors. The CoolMOS™ CFD7A technology offers optimized switching performance compared to standard MOSFETs. Consider the integrated snubber when designing gate drive circuits to minimize external component count. Verify that the PCB layout accommodates the EasyPACK™ 1B package dimensions and PressFIT pin configuration.

FET, MOSFET Arrays Part Context

This component belongs to the Infineon EasyPACK™ 1B family, designed specifically for automotive power electronics. It combines advanced silicon carbide or superjunction MOSFET technologies with integrated passive components. The series targets high-density power conversion systems where space constraints and thermal management are critical design parameters.

FET, MOSFET Arrays Replacement Considerations

Consult the official Infineon replacement guide for direct equivalents. Verify pinout compatibility and thermal resistance values before substitution. Ensure any alternative device meets the same AQG 324 qualification standards for automotive applications.