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The F450R12KS4BOSA1 is a four-pack IGBT module from Infineon Technologies, rated for a collector-emitter voltage of 1200 V. It supports a continuous DC collector current of 70 A at 25°C and 50 A at 70°C case temperature. The module features a typical collector-emitter saturation voltage of 3.2 V at 25°C and a total power dissipation of 355 W. It includes an integrated NTC thermistor with a nominal resistance of 5 kΩ at 25°C. The unit weighs 180 g and utilizes a copper baseplate.
Verify the specific ordering suffix BOSA1 against official documentation to confirm compliance details and material composition. Ensure that the requested quantity aligns with standard factory packaging configurations. Confirm RoHS status and lead times directly with authorized distribution channels prior to finalizing procurement orders.
Select this component based on the required 1200 V blocking capability and the necessary continuous current rating of up to 70 A. Evaluate the thermal management requirements against the specified junction-to-case thermal resistance values. Ensure the gate drive circuitry can accommodate the recommended operating voltages and internal gate resistance characteristics.
This module belongs to the IGBT2 Fast series by Infineon Technologies. It is designed for industrial applications requiring robust switching performance. The product line emphasizes fast short tail IGBT chip technology to optimize switching losses in high-frequency power conversion environments.
Consult official replacement guides or datasheets for direct substitutes. Verify pinout compatibility and thermal resistance specifications before implementing any alternative components in existing designs.