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Product Detailed Parameters
- Description：IGBT MOD 1200V 100A 500W
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Configuration：Three Phase Inverter
- Vce(on) (Max) @ Vge, Ic：3.75V @ 15V, 75A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：100 A
- Power - Max：500 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：5.1 nF @ 25 V
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Overview
The F475R12KS4BOSA1 is a 1200 V IGBT module with an integrated anti-parallel diode, designed for inverter applications. It features a collector-emitter saturation voltage of 3.2 V at 75 A and 25°C, with a continuous DC collector current rating of 75 A at TC=65°C. The module dissipates up to 500 W at 25°C case temperature. Key electrical parameters include a gate threshold voltage of 5.5 V typical, input capacitance of 5.1 nF, and turn-on energy loss of 9.0 mJ at 75 A and 600 V. Thermal resistance from junction to case is 0.25 K/W per IGBT and 0.55 K/W per diode. The unit weighs 180 g and operates within a junction temperature range of -40°C to 125°C.
Feature Summary
- Integrated NTC thermistor for precise thermal monitoring
- High short-circuit capability up to 450 A for robust fault protection
- Low stray inductance design optimized for high-speed switching
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific ordering suffix BOSA1 against official Infineon documentation to confirm manufacturing origin and compliance details. Ensure that the procurement channel provides valid traceability certificates and RoHS compliance statements matching the datasheet revision. Cross-reference the part number with authorized distributors to avoid counterfeit components.
Selection Notes
Select this module based on its 1200 V blocking voltage and 75 A continuous current rating suitable for medium-power inverter topologies. Evaluate the thermal resistance values to ensure adequate heatsinking for the intended duty cycle. Confirm that the gate drive requirements align with the specified 15 V operating voltage and internal gate resistor characteristics.
Part Context
This component belongs to the F4 series of IGBT modules from Infineon Technologies. It utilizes TRENCHSTOP technology to balance switching losses and conduction voltage. The EconoPACK package format allows for compact mounting and efficient thermal management in standard industrial power electronics designs.
Replacement Considerations
Direct replacements must match the 1200 V rating, 75 A current capacity, and EconoPACK mechanical footprint. Verify equivalent thermal resistance and switching energy characteristics to maintain system performance without redesigning the gate drive or cooling infrastructure.
