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The FB180SA10 is an N-Channel MOSFET from the HEXFET series, manufactured by Vishay General Semiconductor - Diodes Division. It features a Drain-Source Voltage (Vds) of 100 V and a continuous Drain Current (Id) of 180 A at 25°C case temperature. The device has a maximum on-resistance (Rds(on)) of 6.5 mOhm at 108 A and 10 V gate-source voltage. Maximum power dissipation is rated at 480 W at 25°C. It utilizes a SOT-227 chassis mount package.
Verify component status as the FB180SA10 is listed as obsolete or discontinued in multiple distributor records. Confirm availability of alternative sources or final time buys if immediate procurement is required. Ensure compatibility with existing PCB layouts or chassis mounting hardware before ordering, as replacement components may differ in physical dimensions.
Select this component for applications requiring high current handling up to 180 A with low voltage drop. The SOT-227 package necessitates specific chassis mounting solutions rather than standard PCB through-hole or surface mount techniques. Evaluate thermal resistance requirements carefully given the 480 W dissipation rating is dependent on case temperature conditions.
This part belongs to Vishay's HEXFET family of power MOSFETs, designed for general-purpose power switching. The SOT-227 package is a legacy large-signal transistor outline suitable for high-power density applications where direct heatsinking is preferred over board-level thermal relief.
VS-FB180SA10P is identified as a recommended alternate part number.