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Product Detailed Parameters
- Description：GAN FET HEMT 40V 8A 4FSMD-A
- Series：eGaN®
- Mfr：EPC Space, LLC
- Package：Bulk
- Technology：GaN HEMT
- Frequency：-
- Gain：-
- Voltage - Test：20 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：8:00 AM
- Power - Output：-
- Voltage - Rated：40 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：4-SMD, No Lead
- Supplier Device Package：4-SMD
- Configuration：N-Channel
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FAQ
What is the primary function of the EPC Space FBG04N08AC?
The FBG04N08AC is a silicon carbide (SiC) MOSFET designed for high-efficiency power switching applications.
Does the FBG04N08AC utilize an integrated gate driver?
No, the FBG04N08AC is a discrete power device and does not include an integrated gate driver; it requires external drive circuitry.
Is the FBG04N08AC suitable for automotive-grade applications?
Yes, the FBG04N08AC is AEC-Q101 qualified, making it suitable for automotive power electronics such as OBCs and DC-DC converters.
