FBG04N30BSH

Overview

The FBG04N30BSH is a Gallium Nitride (GaN) power switching HEMT from the EPC Space FSMD-B series, designed for high-reliability applications. It features an N-channel configuration with a drain-to-source voltage of 40 V and a continuous drain current of 30 A at case temperature. The device exhibits a low on-resistance ranging from 9 to 11 mΩ. Packaged in the 4FSMD-B surface mount format, it utilizes eGaN technology to provide high electron mobility and low temperature coefficients, ensuring efficient power switching performance.

Feature Summary

• Rad-hard GaN packaged HEMT architecture optimized for space environments
• Low on-resistance due to high electron mobility and low temperature coefficients
• Surface mount FSMD-B package design for critical reliability applications

Applications

• High reliability commercial satellite systems
• Space environment critical components
• Voltage regulator modules (VRM)
• Intermediate bus converters

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revisions match specific project requirements. Ensure handling procedures comply with electrostatic discharge protocols for sensitive GaN devices. Validate packaging integrity upon receipt to maintain radiation hardness specifications.

Selection Notes

Select this component for applications requiring robust radiation tolerance and high efficiency in constrained volumes. The 40V rating suits low-voltage DC-DC conversion tasks. Evaluate thermal management needs based on the 30A current capability and package thermal characteristics. Compare against standard silicon MOSFETs for superior switching speed and reduced conduction losses.

Part Context

This part belongs to the EPC Space rad-hard GaN discrete device family. It shares design principles with other FSMD-B series components like the FBG10N30BSH, focusing on space-grade reliability. The product line targets demanding aerospace and defense sectors where standard commercial components may fail under radiation stress.

Replacement Considerations

Direct substitutes include other EPC Space rad-hard GaN FETs such as the FBG10N30BSH or EPC7001BC series. Verify pin compatibility and electrical parameters before substitution. Cross-model generic text should not be assumed; consult official datasheets for specific differences.