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The FBG30N04CC is a single N-channel enhancement-mode Gallium Nitride (eGaN) Field Effect Transistor manufactured by EPC Space, LLC. It features a 300 V drain-source voltage rating and a continuous drain current of 4 A at case temperature. The device exhibits a maximum on-resistance of 370 mΩ. Packaged in the compact FSMD-C surface mount format, this component is engineered for high-reliability commercial satellite applications requiring radiation-hardened power switching solutions.
Verify the specific ordering suffix and lot traceability documentation to ensure compliance with aerospace quality standards. Confirm that the received units match the exact part number designation and package type specified in the official datasheet before integration into flight-critical hardware designs.
Select this component when designing systems requiring radiation tolerance and low gate charge efficiency. The FSMD-C package suits applications where thermal management and physical footprint are constrained. Ensure the drive circuitry supports logic-level operation to fully enhance the channel and minimize conduction losses during switching cycles.
This device belongs to the FSMD-C series of eGaN power switching HEMTs from EPC Space. The series is specifically engineered for commercial satellite markets, offering a balance of high performance and proven reliability. These transistors utilize advanced gallium nitride materials to achieve superior switching characteristics compared to traditional silicon counterparts.
Direct substitutes include other parts within the EPC Space FSMD-C series such as the FBG30N04CSH, which shares similar voltage ratings but may differ in resistance specifications. Verify pinout compatibility and thermal requirements before swapping components in existing layouts.