FBG30N04CC

FBG30N04CC

$238.62
  • Description:GAN FET HEMT 300V4A COTS 4FSMD-C
  • Series:eGaN®

SKU:16b390174dec Category: Brand:

  
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Product Detailed Parameters

  • Description:GAN FET HEMT 300V4A COTS 4FSMD-C
  • Series:eGaN®
  • Mfr:EPC Space, LLC
  • Package:Bulk
  • Technology:GaN HEMT
  • Frequency:-
  • Gain:-
  • Voltage - Test:150 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:4:00 AM
  • Power - Output:-
  • Voltage - Rated:300 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD, No Lead
  • Supplier Device Package:4-SMD
  • Configuration:N-Channel

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FBG30N04CC

Overview

The FBG30N04CC is a single N-channel enhancement-mode Gallium Nitride (eGaN) Field Effect Transistor manufactured by EPC Space, LLC. It features a 300 V drain-source voltage rating and a continuous drain current of 4 A at case temperature. The device exhibits a maximum on-resistance of 370 mΩ. Packaged in the compact FSMD-C surface mount format, this component is engineered for high-reliability commercial satellite applications requiring radiation-hardened power switching solutions.

Feature Summary

  • Enhancement-mode GaN HEMT technology optimized for critical spaceborne systems
  • Compact hermetic surface mount package designed for weight-sensitive environments
  • Integrated source sense pin for precise current monitoring and control

Applications

  • Commercial satellite power management systems
  • High-reliability spaceborne electronic circuits
  • Radiation-hardened power switching modules

Procurement Notes

Verify the specific ordering suffix and lot traceability documentation to ensure compliance with aerospace quality standards. Confirm that the received units match the exact part number designation and package type specified in the official datasheet before integration into flight-critical hardware designs.

Selection Notes

Select this component when designing systems requiring radiation tolerance and low gate charge efficiency. The FSMD-C package suits applications where thermal management and physical footprint are constrained. Ensure the drive circuitry supports logic-level operation to fully enhance the channel and minimize conduction losses during switching cycles.

Part Context

This device belongs to the FSMD-C series of eGaN power switching HEMTs from EPC Space. The series is specifically engineered for commercial satellite markets, offering a balance of high performance and proven reliability. These transistors utilize advanced gallium nitride materials to achieve superior switching characteristics compared to traditional silicon counterparts.

Replacement Considerations

Direct substitutes include other parts within the EPC Space FSMD-C series such as the FBG30N04CSH, which shares similar voltage ratings but may differ in resistance specifications. Verify pinout compatibility and thermal requirements before swapping components in existing layouts.

FBG30N04CCFBG30N04CC
$238.62
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