FC6946010R

FET, MOSFET Arrays Overview

The FC6946010R is a dual N-channel enhancement-mode MOSFET manufactured by Panasonic Industry (NTCJ). It features a compact SSMini6-F3-B surface-mount package with dimensions of 1.6 mm x 1.2 mm x 0.5 mm. The device provides a drain-source breakdown voltage (VDSS) of 60 V and a continuous drain current (ID) of 100 mA at 25°C. Key electrical parameters include a maximum drain-source on-resistance (RDS(on)) of 15 Ω at VGS = 4.0 V, and a gate threshold voltage (VTH) ranging from 0.9 V to 1.5 V. Total power dissipation is rated at 125 mW, with an operating temperature range of -40°C to +85°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration in a miniature SSMini6-F3-B package for space-constrained designs
• Capable of low-voltage switching operations with a 2.5 V drive capability
• Compliant with RoHS directives and halogen-free manufacturing standards

FET, MOSFET Arrays Applications

• Switching circuits for office equipment
• Signal control in communication equipment
• Power management in measuring instruments
• Load switching in household appliances

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin carefully, as the semiconductor business was transferred to Nuvoton Technology Corporation Japan (NTCJ) effective September 1, 2020. Products manufactured after this date are produced by NTCJ but continue to be distributed under the Panasonic brand. Ensure that the specific batch or revision matches the required technical specifications for your design.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET solution is required in a footprint smaller than standard SOT-666 packages. The FC6946010R is suitable for low-current applications up to 100 mA where a 60 V rating is sufficient. Consider the relatively high RDS(on) compared to larger packages; ensure thermal constraints allow for the 125 mW total power dissipation limit within the specified ambient temperature range.

FET, MOSFET Arrays Part Context

This part belongs to the FC series of MOS FETs designed for general-purpose switching. The FC6946010R utilizes the SSMini6-F3-B package, which offers a reduced footprint compared to traditional SOT-666 configurations while maintaining similar pinout compatibility. It serves as a compact alternative for dual-channel logic-level switching requirements in consumer electronics.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes may include other dual N-channel MOSFETs in the SSMini6 or SC-70-6 packages with comparable VDSS and ID ratings. Verify pinout alignment and RDS(on) characteristics before substitution. Note that parts manufactured prior to September 2020 will bear the Panasonic Semiconductor Solutions marking, while newer stock will reflect NTCJ production.