FC8V33030L

FET, MOSFET Arrays Overview

The FC8V33030L is a dual N-channel MOSFET in the WMini8-F1 package. It features a drain-source breakdown voltage of 33 V and a typical on-state resistance of 22 mΩ at VGS = 4.5 V. The device supports a steady-state drain current of 6 A and a pulsed drain current of 26 A. Total power dissipation reaches 1 W under steady-state conditions. Key dynamic characteristics include a total gate charge of 3.8 nC, enabling high-speed switching capabilities.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration with individual internal connections for independent operation
• Low drain-source on-state resistance to minimize conduction losses
• High-speed switching performance supported by low total gate charge
• Halogen-free construction compliant with RoHS standards

FET, MOSFET Arrays Applications

• DC-DC converter circuits
• General-purpose switching applications
• Office equipment power management
• Household appliance control systems

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin carefully, as the semiconductor business was transferred to Nuvoton Technology Corporation Japan (NTCJ) effective September 1, 2020. Products manufactured after this date are handled as NTCJ-made items but continue to be sold through Panasonic Corporation channels. Ensure documentation reflects the correct publisher entity for compliance purposes.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual N-channel solution is required within a 33 V system. The 22 mΩ RDS(on) specification makes it suitable for low-loss switching at 4.5 V or 10 V gate drive levels. Verify that the operating ambient temperature falls within the -40°C to +85°C range and that thermal management accommodates the 1 W steady-state power dissipation limit.

FET, MOSFET Arrays Part Context

This component belongs to the MOS FET product line distributed by Panasonic Industry. It utilizes the JEITA SC-115 package standard, designated as WMini8-F1. The datasheet revision history indicates establishment in April 2011 and a subsequent revision in July 2013. The part number structure identifies it specifically as a dual N-channel device with a 33 V rating.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official cross-reference lists or contact the manufacturer directly for validated alternatives.