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Product Detailed Parameters
- Description：MOSFET N-CH 600V TO-3PN
- Series：SupreMOS®
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：199mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：52.3 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：2170 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：134.4W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3PN
- Package / Case：TO-3P-3, SC-65-3
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Overview
The FCA16N60N is a single N-channel enhancement mode power MOSFET from onsemi's SuperFET family, utilizing charge balance technology for low conduction and switching losses. It features a 600 V drain-source breakdown voltage and a continuous drain current of 16 A at case temperature. The device offers a maximum on-resistance of 260 mΩ at 10 V gate drive and operates within a junction temperature range of -55°C to +150°C. Packaged in a TO-3PN-3 through-hole housing, it supports high avalanche energy applications.
Feature Summary
- SuperFET technology with charge balance mechanism for optimized performance
- High avalanche energy capability for robust operation
- Low forward transconductance for stable switching characteristics
Applications
- Switching mode AC/DC power conversion systems
- Industrial power supply designs
- System miniaturization requiring high efficiency
Procurement Notes
Verify the specific suffix against official datasheets as variations may exist. Confirm RoHS compliance status via manufacturer declarations. Check obsolescence notices before finalizing design-in decisions. Ensure thermal management aligns with specified power dissipation limits.
Selection Notes
Select this component for applications requiring 600 V blocking capability with moderate current handling. Compare on-resistance values at relevant gate voltages against alternative SuperFET series. Evaluate thermal resistance parameters for heatsink requirements in enclosed environments.
Part Context
This part belongs to the Fairchild Semiconductor SuperFET family, now integrated into onsemi's portfolio following acquisition. The series focuses on high-voltage silicon MOSFETs designed to minimize conduction loss while maintaining superior switching performance and dv/dt withstand capabilities.
Replacement Considerations
FCP16N60: Similar electrical ratings but different package (TO-220-3). Verify pinout compatibility and thermal interface requirements before substitution.
