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Product Detailed Parameters
- Description：MOSFET N-CH 600V 20A TO3PN
- Series：SuperFET™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：98 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：3080 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：208W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3PN
- Package / Case：TO-3P-3, SC-65-3
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Overview
The FCA20N60-F109 is a single N-channel power MOSFET from onsemi, utilizing SuperFET FRFET technology. It features a 600V drain-source breakdown voltage and a continuous drain current of 20A. The device offers a maximum on-resistance of 150 mΩ at 10V gate drive. Key switching parameters include a gate charge of 98 nC, with typical rise and fall times of 140 ns and 65 ns, respectively. It operates within a temperature range of -55°C to +150°C and dissipates up to 208W in a TO-3PN package.
Feature Summary
- SuperFET FRFET technology for optimized high-voltage performance
- Low on-resistance for efficient power handling
- Robust thermal capability for high-power applications
Applications
- High-frequency switch-mode power supplies
- Industrial motor control systems
- DC-DC converters
Procurement Notes
Verify the specific suffix against official datasheets to confirm exact electrical tolerances and packaging variations. Ensure compatibility with existing thermal management designs due to the TO-3PN form factor. Confirm RoHS compliance status through manufacturer documentation before integration into regulated products.
Selection Notes
Select this component for designs requiring high voltage isolation and moderate current capacity. The low gate charge supports efficient driving in high-speed switching environments. Evaluate thermal resistance requirements carefully given the 208W dissipation rating in the specified package style.
Part Context
This part belongs to onsemi's SuperFET family, designed for high-efficiency power conversion. It serves as a discrete solution for replacing older generation MOSFETs in legacy industrial and consumer power supply architectures where reliability and switching speed are critical.
Replacement Considerations
The FCA20N60 is listed as End-of-Life. Verify availability of direct functional equivalents or updated series revisions that maintain pinout and electrical parameter compatibility.
