FCA20N60

$5.96

Description：MOSFET N-CH 600V 20A TO3PN
Series：SuperFET™
Mfr：onsemi
Package：Tube

SKU:c54eda58cfca Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 20A TO3PN
Series：SuperFET™
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：98 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：3080 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：208W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-3PN
Package / Case：TO-3P-3, SC-65-3

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FCA20N60

Overview

The FCA20N60 is a single N-channel Power MOSFET manufactured by onsemi, utilizing SuperFET technology. It features a TO-3PN package with a drain-source breakdown voltage (Vds) of 600 V and a continuous drain current (Id) of 20 A at case temperature. The maximum on-resistance (Rds(on)) is specified as 190 mΩ. The device supports a gate-source voltage range of ±30 V and operates within a junction temperature range of -55°C to +150°C. Key switching parameters include a typical turn-on delay time of 62 ns, turn-off delay of 230 ns, rise time of 140 ns, and fall time of 65 ns. Maximum power dissipation is rated at 208 W.

Feature Summary

SuperFET technology integration for optimized high-voltage performance
Enhanced avalanche ruggedness capability
Low on-resistance design for efficient conduction

Applications

High-power switching applications
Industrial motor control systems
Power supply circuits

Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm the specific datasheet revision matches the production lot date code. Ensure that the TO-3PN package dimensions align with the target PCB footprint requirements. Check for any end-of-life notices or obsolescence warnings prior to finalizing procurement plans.

Selection Notes

Select this component when a 600 V rating and 20 A continuous current capacity are required in a TO-3PN form factor. Evaluate thermal management needs based on the 208 W dissipation rating. Compare switching speeds against system requirements using the provided delay and rise/fall times. Consider the 190 mΩ on-resistance impact on overall efficiency during conduction phases.

Part Context

This part belongs to the FCA series of high-voltage N-channel MOSFETs from onsemi. These devices are designed for robust operation in demanding power electronics environments. The SuperFET architecture aims to balance low conduction losses with reliable switching characteristics suitable for industrial and commercial power conversion tasks.