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Product Detailed Parameters
- Description：MOSFET N-CH 600V 22A TO3PN
- Series：SupreMOS™
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：165mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1950 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：205W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3PN
- Package / Case：TO-3P-3, SC-65-3
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Overview
The FCA22N60N is a single N-channel power MOSFET manufactured by onsemi, utilizing SupreMOS technology. It features a TO-3PN-3 through-hole package with a 600 V drain-source breakdown voltage and a continuous drain current of 22 A at case temperature. The device exhibits a maximum on-resistance of 165 mΩ at 10 V gate drive and a typical gate charge of 45 nC. It supports a junction temperature range from -55°C to +150°C with a power dissipation rating of 205 W.
Feature Summary
- SupreMOS technology for optimized switching performance
- High avalanche energy capability
- Fast body diode recovery characteristics
Applications
- High-frequency power conversion circuits
- Industrial motor control systems
- Uninterruptible power supply (UPS) units
Procurement Notes
Verify component authenticity through authorized distribution channels due to the high prevalence of counterfeit power semiconductors. Confirm that the physical marking matches the official datasheet specifications exactly. Inspect leads for corrosion or damage prior to installation. Ensure storage conditions comply with moisture sensitivity level requirements to prevent package integrity issues during soldering processes.
Selection Notes
Select this component when a robust N-channel MOSFET with 600 V blocking capability and moderate current handling is required in a through-hole configuration. The low on-resistance minimizes conduction losses in high-efficiency designs. Consider thermal management requirements carefully as the TO-3PN package relies on external heatsinking for optimal performance under continuous load conditions.
Part Context
This part belongs to the SupreMOS family of high-voltage power MOSFETs from onsemi. It represents a legacy product line originally developed by Fairchild Semiconductor before its acquisition. The device is designed for general-purpose high-power switching applications where reliability and ruggedness are critical operational parameters.
Replacement Considerations
Direct pin-compatible substitutes include the FDP22N60N and FCP22N60N. Verify electrical parameter equivalence, particularly on-resistance and gate charge values, before implementing any cross-brand replacement in existing circuit designs.
