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Product Detailed Parameters
- Description：MOSFET N-CH 600V 47A TO3PN
- Series：SuperFET™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：70mOhm @ 23.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：270 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：8000 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：417W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3PN
- Package / Case：TO-3P-3, SC-65-3
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Overview
The onsemi FCA47N60 is an N-channel enhancement mode power MOSFET belonging to the SuperFET series. It features a TO-3PN through-hole package with three pins. Key electrical parameters include a maximum drain-source voltage of 600 V and a continuous drain current of 47 A. The device exhibits a maximum drain-source on-resistance of 73 mΩ, a typical gate charge of 210 nC at 10 V, and a maximum power dissipation of 417 W. It operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- Integrated body diode for inductive load switching applications
- SuperFET technology optimized for low conduction losses
- Robust avalanche energy rating for rugged operation
Applications
- High-frequency switch-mode power supplies
- DC-DC converter circuits
- Motor control systems
Procurement Notes
Verify the specific suffix against official datasheets to confirm pinout compatibility and thermal characteristics. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.
Selection Notes
Select this component for designs requiring high voltage isolation and significant current handling capabilities. The TO-3PN package facilitates efficient heat dissipation via flange mounting. Evaluate the gate charge specifications against driver capabilities to ensure optimal switching performance and minimize transition losses in the circuit design.
Part Context
This device is part of onsemi's SuperFET portfolio, designed for high-efficiency power conversion. It utilizes advanced planar trench technology to achieve superior performance metrics compared to standard planar MOSFETs. The product line targets industrial and commercial power supply applications demanding reliability and compact form factors.
Replacement Considerations
Direct substitutes include the FCH47N60N from Fairchild Semiconductor, which shares identical electrical ratings and TO-247 packaging. Verify pinout alignment and thermal resistance values when transitioning between manufacturers.
