FCAB21520L1

Description：MOSFET 2N-CH 10SMD
Series：-

SKU:00d5273298a2 Category: FET, MOSFET Arrays Brand: Panasonic Electronic Components

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Product introduction

FCAB21520L1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is MOSFET 2N-CH 10SMD. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FCAB21520L1

Description：MOSFET 2N-CH 10SMD
Series：-
Mfr：Panasonic Electronic Components
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：1.4V @ 1.64mA
Gate Charge (Qg) (Max) @ Vgs：38nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds：5250pF @ 10V
Power - Max：3.8W (Ta)
Operating Temperature：150°C
Mounting Type：Surface Mount
Package / Case：10-SMD, No Lead
Supplier Device Package：10-SMD
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FCAB21520L1

FCAB21520L1

FET, MOSFET Arrays Overview

The FCAB21520L1 is a dual N-channel MOSFET in a CSP-4 package, designed for lithium-ion secondary battery protection circuits. It features a source-source breakdown voltage of 12 V and a continuous source current of 35 A on ceramic substrates. The typical source-source on-state resistance is 1.6 mΩ at VGS = 3.8 V. Total power dissipation reaches 0.54 W on FR4 boards and 3.8 W on ceramic substrates. Operating junction temperature extends to +150 °C with a storage range of -55 °C to +150 °C.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration optimized for battery protection applications
Ultra-low on-state resistance for high-efficiency power handling
High thermal performance capability on ceramic substrates

FET, MOSFET Arrays Applications

Lithium-ion secondary battery protection circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision against Panasonic's official documentation before finalizing designs. Confirm that the CSP-4 package dimensions align with the provided land pattern reference. Ensure compliance with JEITA standards and RoHS directives as specified in the product standards section.

FET, MOSFET Arrays Selection Notes

Select this component when low on-resistance is critical for minimizing power loss in battery management systems. Evaluate thermal requirements carefully; use ceramic substrates to maximize power dissipation capabilities. Verify gate drive voltages match the threshold characteristics for optimal switching performance.

FET, MOSFET Arrays Part Context

This device belongs to the FCAB series of dual MOSFETs manufactured by Panasonic Industrial Devices. It utilizes a Chip Size Package (CSP) to provide a compact footprint suitable for space-constrained portable electronics and battery packs requiring efficient power switching.