FCB11N60FTM

$2.38

Description：MOSFET N-CH 600V 11A D2PAK
Series：SuperFET™
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7c33509db1e9 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 11A D2PAK
Series：SuperFET™
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：52 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1490 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：125W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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FCB11N60FTM

Overview

The FCB11N60FTM is a 600V N-Channel MOSFET from the SuperFET family, packaged in D2-PAK. It features a typical RDS(on) of 0.32Ω at VGS=10V and ID=5.5A. The device supports continuous drain currents of 11A (TC=25°C) and 7A (TC=100°C), with a pulsed current capability of 33A. Key electrical parameters include a total gate charge (Qg) of 40nC, reverse recovery time (trr) of 120ns, and single-pulsed avalanche energy (EAS) of 340mJ. Thermal resistance junction-to-case is 1.0°C/W.

Feature Summary

Utilizes advanced charge balance mechanism for low on-resistance and reduced gate charge
Fast-recovery body diode with low reverse recovery charge and time
High dv/dt ruggedness and superior switching performance
100% avalanche tested for enhanced reliability

Applications

AC/DC power conversion in switching mode operation
System miniaturization applications requiring high efficiency
High-voltage power switching circuits

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels to avoid counterfeit parts. Confirm RoHS compliance status and check for specific ordering suffixes that may affect packaging or reel size. Ensure the supplier provides traceability documentation consistent with Fairchild Semiconductor quality standards.

Selection Notes

Select this component for designs requiring robust high-voltage switching with minimized conduction losses. The low gate charge facilitates efficient driver design, while the fast-recovery diode suits bridge topologies. Evaluate thermal management requirements based on the specified junction-to-case resistance and derating curves for continuous operation.

Part Context

This part belongs to the SuperFET series by Fairchild Semiconductor, now part of onsemi. The technology focuses on minimizing conduction loss and improving switching speed compared to standard MOSFETs. The FCB11N60FTM specifically denotes the D2-PAK package variant within this high-voltage lineup.