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Product Detailed Parameters
- Description：MOSFET N-CH 600V 20A D2PAK
- Series：SuperFET™
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：98 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：3080 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：208W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The FCB20N60FTM is a single N-channel power MOSFET from onsemi's SuperFET family, designed for high-voltage switching applications. It features a 600V drain-source breakdown voltage and supports a continuous drain current of 20A at case temperature. The device utilizes a TO-263 (D2PAK) surface-mount package to facilitate efficient thermal management. Key electrical characteristics include a maximum on-resistance of 190 milliohms at 10V gate drive and a total gate charge of 98 nanocoulombs. It operates within a junction temperature range of -55°C to +150°C with a power dissipation rating of 208W.
Feature Summary
- Integrated SuperFET technology optimized for low conduction losses and fast switching performance
- Robust thermal design in a D2PAK package suitable for high-power density applications
- Enhanced avalanche energy capability for improved reliability under transient stress
Applications
- High-frequency switch-mode power supplies
- Motor control circuits
- DC-DC converter topologies
Procurement Notes
Verify the specific suffix 'FTM' against official datasheets to confirm tape-and-reel packaging and exact marking specifications. Ensure compatibility with standard D2PAK footprints during PCB layout. Confirm RoHS compliance status through manufacturer declarations prior to integration into regulated assemblies.
Selection Notes
Select this component when a 600V rating is required alongside moderate current handling capabilities. The low gate charge facilitates driver efficiency in high-speed switching environments. Evaluate thermal resistance requirements based on the specific heatsinking strategy employed in the target application design.
Part Context
This part belongs to the SuperFET series, which combines advanced trench gate technology with optimized body diode characteristics. It serves as a discrete solution for medium-power conversion tasks where efficiency and switching speed are critical design parameters.
Replacement Considerations
Cross-reference with FCB20N60TM for identical electrical specifications but different packaging formats. Verify pinout compatibility before substitution.
