FCB36N60NTM

$7.24

Description：MOSFET N-CH 600V 36A D2PAK
Series：SupreMOS™
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:73d4a6d6adb2 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 36A D2PAK
Series：SupreMOS™
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：90mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：112 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：4785 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：312W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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FCB36N60NTM

Overview

The FCB36N60NTM is a single N-Channel SupreMOS MOSFET manufactured by onsemi. It utilizes deep trench filling super-junction technology to achieve low on-resistance and superior switching performance. The device features a 600 V drain-source breakdown voltage and a continuous drain current of 36 A. Key electrical parameters include a maximum Rds(on) of 90 mΩ at Vgs = 10 V, a gate charge of 86 nC, and a power dissipation rating of 312 W. It operates within a temperature range of -55°C to +150°C.

Feature Summary

Employs deep trench filling super-junction technology for optimized on-resistance and ruggedness.
Provides ultra-low gate charge to enhance switching efficiency in high-frequency applications.
Features low effective output capacitance for improved converter performance.

Applications

Power Factor Correction (PFC) circuits
Server and telecom power supplies
Flat Panel Display (FPD) TV power systems

Procurement Notes

Verify the specific suffix 'NTM' against the official datasheet to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's material declaration. Check for obsolescence notices as legacy Fairchild products may have limited availability or end-of-life status.

Selection Notes

Select this component for designs requiring 600V blocking capability with high current handling. The low gate charge makes it suitable for high-frequency switching topologies. Ensure thermal management supports the 312 W dissipation rating in the chosen TO-220-3 package configuration.

Part Context

This part belongs to the SupreMOS family, representing next-generation high-voltage super-junction technology. Originally developed by Fairchild Semiconductor, the product line was integrated into onsemi following their acquisition. The series targets efficient power conversion in industrial and consumer electronics.

Replacement Considerations

FCB36N60N: Pin-compatible alternative with identical electrical characteristics but potentially different packaging or suffix designation.

FAQ

What technology distinguishes the SupreMOS MOSFET from conventional super-junction devices?

It employs a deep trench filling process that provides lower on-resistance and superior switching performance compared to conventional super-junction MOSFETs.