ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 650V 10A DPAK
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：360mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：730 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：83W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Download product information
Overview
The FCD360N65S3R0 is a single N-channel SuperFET III MOSFET manufactured by onsemi. It features a 650V drain-source voltage rating and a 10A continuous drain current capability. The device exhibits a maximum on-resistance of 360 mΩ at 25°C. Key electrical parameters include a gate-source voltage range of ±30V, a typical gate charge of 18nC, and a power dissipation capacity of 83W. The component operates within a temperature range of -55°C to +150°C junction temperature and utilizes a DPAK-3 (TO-252-3) surface-mount package.
Feature Summary
- SuperFET III technology utilizing charge balance for low conduction and switching losses
- High dv/dt rating for robust performance in fast-switching applications
- Enhanced EMI performance through optimized gate drive characteristics
- 100% avalanche tested for improved reliability under transient conditions
Applications
- Telecommunications and server power supplies
- Industrial power conversion systems
- Uninterruptible power supply (UPS) units
- Solar energy inverters
Procurement Notes
Verify the specific suffix R0 against official datasheets to confirm packaging configuration. Ensure compatibility with standard TO-252 footprints during PCB layout. Confirm RoHS compliance status via manufacturer documentation prior to integration. Validate thermal management requirements based on the specified 83W power dissipation limit.
Selection Notes
Select this component for designs requiring high-voltage isolation with moderate current handling. The low gate charge facilitates efficient driver selection. Consider the thermal resistance of the DPAK package for heat sinking strategies. Evaluate system voltage spikes against the 650V breakdown rating to ensure adequate safety margins.
Part Context
This part belongs to the SuperFET III family of high-voltage superjunction MOSFETs. The series emphasizes efficiency improvements over previous generations through reduced figure-of-merit values. It targets applications demanding high reliability and compact form factors in power electronics.
Replacement Considerations
Cross-reference with other SuperFET III variants such as FCMT360N65S3 or NTD360N65S3H for alternative package options. Verify pinout compatibility before substitution. Check if updated revisions offer improved thermal or electrical specifications.
