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Product Detailed Parameters
- Description：MOSFET N-CH 600V 4.6A DPAK
- Series：SuperFET™
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：4.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：950mOhm @ 2.3A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：600 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：54W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The FCD5N60TF is a single N-channel SuperFET MOSFET manufactured by onsemi, housed in a DPAK (TO-252) surface-mount package. It features a 600V drain-source voltage rating and a continuous drain current of 4.6A at case temperature of 25°C. The device exhibits a maximum on-resistance of 2 Ohms when driven at 10V with a 2A current. Key switching parameters include a typical gate charge of 13nC at 10V and an input capacitance of 600pF at 25V. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Utilizes SuperFET technology for optimized performance in high-voltage applications
- Designed for efficient power switching with low gate charge characteristics
- Robust construction suitable for demanding thermal environments
Applications
- Switching regulators
- Power factor correction circuits
- DC-DC converters
Procurement Notes
Verify the specific suffix 'TF' against the official datasheet to confirm packaging details such as tape and reel specifications. Ensure the component matches the required DPAK footprint and pinout configuration for your PCB layout. Cross-reference the manufacturer's latest documentation to confirm compliance with current environmental standards and RoHS directives before finalizing procurement.
Selection Notes
Select this component for designs requiring a 600V blocking capability with moderate current handling in a compact surface-mount form factor. The low gate charge supports higher frequency operation, reducing passive component size. Evaluate thermal management requirements based on the 2 Ohm on-resistance to ensure junction temperatures remain within the specified operational limits during continuous conduction.
Part Context
This part belongs to the SuperFET family from onsemi, which integrates advanced planar stripe DMOS technology. This series is engineered to minimize on-resistance while maintaining high avalanche energy strength. The FCD5N60TF represents a standard offering within this lineup, balancing electrical performance with cost-effectiveness for general-purpose power switching applications.
Replacement Considerations
Compatible substitutes include the FCD5N60TM and FCD5N60-F085, which share similar electrical ratings and package types. Verify that any replacement maintains the same DPAK mechanical dimensions and pin assignment to ensure direct compatibility without redesigning the printed circuit board.
